|
产品型号Item |
GaN-FS-10 |
GaN-FS-15 |
|
尺寸Dimensions |
10.0mm×10.5mm |
14.0mm×15.0mm |
|
孔洞密度Marco Defect Density |
A Level |
0 cm-2 |
|
B Level |
≤ 2 cm-2 | |
|
厚度Thickness |
Rank 300 |
300 ± 25 µm |
|
Rank 350 |
350 ± 25 µm | |
|
Rank 400 |
400 ± 25 µm | |
|
晶体取向Orientation |
C-axis(0001) ± 0.5° | |
|
TTV(Total Thickness Variation) |
≤15 µm | |
|
弯曲度BOW |
≤20 µm | |
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
|
电阻率Resistivity(300K) |
< 0.5 Ω·cm |
>106 Ω·cm |
|
位错密度Dislocation Density |
Less than 5x106 cm-2 | |
|
有效面积Useable Surface Area |
> 90% | |
|
抛光Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground | |
|
包装Package |
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |