|
Major capability parameter | |||
|
Crystal structure |
M4 | ||
|
Growth method |
Czochralski method | ||
|
AtomsDensity |
~1.37x1020atoms/cm3 | ||
|
Unit cell constant |
a=b=7.12 Å， c=6.29 Å | ||
|
Density |
4.22（g/cm3） | ||
|
Hardness |
5（mohs）（similar with glass） | ||
|
Melt point |
1825℃ | ||
|
Thermal conductivity |
A=5.32（w/mk）C=5.10（w/mk） | ||
|
Denko coefficient |
dna/dT=8.5×10-6/k；dnc/dT=3.0×10-6/k | ||
|
Thermal expansion |
aa=4.43x10-6/K ac=11.37x1010-6/K | ||
|
Spectral range |
0.45—5µm | ||
|
(λ:μm) |
ne2=3.77843+0.069736/(λ2 -0.04724)-0.0108133λ2
ne2=4.55905+0.110534/(λ2 -0.04813)-0.0122676λ2 | ||
|
n \ wavelength |
0.63µm |
1.30µm |
1.55µm |
|
Index of refraction no |
1.9929 |
1.9500 |
1.9447 |
|
Index of refraction ne |
2.22154 |
2.1554 |
2.1486 |
|
（△n=ne-no) |
0.2225 |
0.2054 |
0.2039 |
|
晶棒<001>±0.5º |
Φ25mm×25mm | ||
|
θ=0/45 º Φ=0/45 º |
2×2×7mm、4×4×7.5mm
| ||
|
AR |
R<0.25% (1550nm) | ||
|
Polishing |
Single or double | ||
|
Pack |
100 clean bag，1000 exactly clean bag | ||