|
Major capability parameter | |||
|
Growth method |
Czochralski method | ||
|
Crystal structure |
M3 | ||
|
Unit cell constant |
a=5.65754 Å | ||
|
Density |
5.323g/cm3 | ||
|
Melt point |
937.4℃ | ||
|
Doped material |
No doped |
Sb-doped |
In / Ga –doped |
|
Type |
/ |
N |
P |
|
Resistivity |
＞35Ωcm |
0.05Ωcm |
0.05~0.1Ωcm |
|
EPD |
＜4×103∕cm2 |
＜4×103∕cm2 |
＜4×103∕cm2 |
|
Size |
10x3，10x5，10x10，15x15，，20x15，20x20， | ||
|
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |||
|
Thickness |
0.5mm，1.0mm | ||
|
Polishing |
Single or double | ||
|
Crystal orientation |
<100>、<110>、<111>、±0.5º | ||
|
Ra: |
≤5Å（5µm×5µm） | ||
|
Pack |
100 clean bag，1000 exactly clean bag | ||