|
Major capability parameter | |
|
Growth method |
MOCVD |
|
Crystal Structure |
M6 |
|
Unit cell constant |
a=3.08 Å c=15.08 Å |
|
Sequence |
ABCACB |
|
Direction |
<0001> 3.5 º |
|
With clearance |
2.93 eV |
|
Hardness |
9.2（mohs） |
|
Heat travels @300K |
5 W/ cm.k |
|
Dielectric constants |
e(11)=e(22)=9.66 e(33)=10.33 |
|
Size |
10x3，10x5，10x10，15x15，，20x15，20x20， |
|
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |
|
Thickness |
0.5mm，1.0mm |
|
Polishing |
Single or double |
|
Crystal orientation |
<001>±0.5º |
|
redirection precision |
±0.5° |
|
Redirection the edge: |
2°（special in 1°） |
|
Angle of crystalline |
Special size and orientation are available upon request |
|
Ra: |
≤5Å（5µm×5µm） |
|
Pack |
100 clean bag，1000 exactly clean bag |